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Growth of CNT

Reference

85755-01

Patents status

Priority patent of invention FR0304830 filed on April 17th, 2003 and FR0700925 entitled: “Procédé d’autoassemblage et d’ancrage contrôlés de nanotubes de carbone” and “Procédé de croissance d’un nanotube de carbone sur pointe nanométrique”

Inventors

Anne-Marie BONNOT
Vincent BOUCHIAT
Marc FAUCHER

commercial status

Non-exclusive licenses

Laboratory

Institut Louis Neel, Grenoble, France, http://neel.cnrs.fr/

Description

CONTEXT

Carbon nanotubes are grown in large scale by CVD methods but the control ot their position and size is not easy. Applications such as electronic components, display, emission electron require however that the position oh the CNT is optimised.

TECHNICAL DESCRIPTION

The invention relates to a process for growing single wall or double wall Carbon Nanotubes on a substrate using a catalyst composed of a bilayer of titanium and cobalt and the hot filament assisted CVD method. Depending on catalyst and growth conditions and substrate shape, CNTs can grow on top or on side of flat steps or extend from the apex of a tip.

BENEFITS

Control of the growth location, orientation and length of CNTs on the substrate.

INDUSTRIAL APPLICATIONS

– Nanosensors, NEMS
– AFM tips
– Electronic
– Field emission

For further information, please contact us (Ref 85755-01)

 


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