Technologies du CNRS

Trouvez les meilleures technologies du CNRS pour mener à bien votre projet d’innovation.

Les brevets les plus récents

Vous êtes un chercheur ?

Nous pouvons vous accompagner sur toute votre
démarche de transfert de technologies.

Voir tous nos services

Vous êtes un industriel ?

Grâce à notre expérience, nos réseaux et notre connaissance de l’écosystème de l’innovation nous vous accompagnons tout au long de votre projet.

Nous contacter

Découvrez les technologies du CNRS

Voir nos actualités et rendez-vous

Rencontrez l’équipe


Process to produce highly alloyed conducting crystalline materials



Statut des brevets

French patent of invention FR851259 filed on February 27th, 2008 and entitled « Procédé de cristallogenese d’un matériau électriquement conducteur »


Thierry DUFFAR
Gilbert VIAN
Sveltana BYKOZA


SIMAP (Science et Ingénierie des MAtériaux et Procédés ), UMR 5266, Grenoble, France,



Segregation of chemical species during solidification of alloys is a well known problem which leads to defects in the material and is largely prejudicial to electronic properties of semi conductors or optical properties of lasers and scintillators. Moreover composition variations lead to microstructure defects detrimental to the growth of single crystals and in some cases leading to breakdown of the samples. There is a need for a simple process aiming at producing highly alloyed materials without  cracks in the crystal and showing high radial and longitudinal homogeneity with an acceptable cristallisation  speed (mm/h).

The well known  « Bridgman » method does not fulfill these requirements (cracks and lack of homogeneity)


In the process as proposed here a conductive material is melt  in a crucible.The temperature of the molten material is slowly decreased so that a Liquid-Solid (LS) interface is created  and the flatness of the SL interface is controlled through the control of the temperature of a piston maintained above the interface. The melt material is stirred by alternative electromagnetic forces during all the process.


Faster growth rate/uniform alloy composition (radial and longitudinal) and crystal homogeneity / production of conductive materials / highly alloyed materials / The process may be applied to any conductive material such as

* semiconductors (germanium and silicium binary alloys/ III-V ternary alloys based on antimony – GaSb, AlSb, InSb-, arsenides -GaAs  InAs – or phospides – GaP, InP-, ternary II-IV alloys based on tellurides -CdTe, ZnTe, HgTe- or  selenides – CdSe , ZnSe-, silicium).
* metallic alloys
* glasses
* oxides or halide crystals if they are electrically condicting in liquid state


* micro-electronics (Ge and Si alloys)
* high-speed electronics and optoelectronics (GaSb, AlSb , InSb, GaAs,  InAs, GaP, In…)
*sensors /detectors for all wavelengths: gamma, X, UV, visible or IR (CdTe, ZnTe, HgTe, CdSe, ZnSe)
* Photovoltaic application by melting and refining of Silicon from lower purity and hence lower cost
* technical glasses for optronics.

For further information, please contact us (Ref 01707-01)



Besoin de plus d'informations ?

Nous contacter


  • Ce champ n’est utilisé qu’à des fins de validation et devrait rester inchangé.

Les brevets les plus récents