CONTEXT

Semiconductor surface treatment aiming at passivating and inhibiting corrosion are highly innovative. The ‘Institut Lavoisier’ from whom the present technology is originated from had already worked on this subject and developped a passivation process with electrochemical assistance. Nevertheless, the present technolgy goes further and aims at avoiding complex process required by the electrochemical process.

TECHNICAL DESCRIPTION

In the present work, the inventors have developped an electroless process of depositing a polyphosphazen [H2N-P=N-]n layer on the surface of III-V semiconductor and more specifically III-P (Phophorus) and InP (Indium-Phosphide) acting therefore as a passivation layer. The process is electroless and simply consists at using an oxydant chemicals (for example PCl5) in an amonia-based solvent.

DEVELOPMENT STAGE

The process has been fully tested, reproduced and assessed.

BENEFITS

This process offers numerous advantages:

• Electroless;
• Inexpensive and eco-friendly solvent;
• Compatible with current semiconductors manufacturing’s processes;
• Compatible with photomask materials;
• Highly reproductible;
• Robustness.

INDUSTRIAL APPLICATIONS

The primary application of the present process is to provide an electroless way to passivate III-V semiconductor inhibiting therefore any corrosion.

For further information, please contact us (Ref 03024-01)