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Method for preparing single-crystal cubic sesquioxides and uses thereof

Référence

03144-01

Statut des brevets

Priority patent application n° 0957772 filed on March,11th 2011 entitled «Procédé de préparation de sesquioxydes cubiques monocristallins et leurs applications."

Inventeurs

Philippe VEBER
Matias VELAZQUEZ
Jean-Pierre CHAMINADE
Oudomsack VIRAPHONG

Statut commercial

Exclusive or non-exclusive license

Laboratoire

Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), a CNRS laboratory (UPR 9048) in Bordeaux, France.
http://www.icmcb.cnrs.fr
 

Description

CONTEXT

Single crystal or thin layer of doped material made from cubic sesquioxide such as Y2O3, Sc2O3 or Lu2O3 for example are choice materials for optical applications such as laser material. Synthesis of large size single crystals (mm to cm) is hard to achieve due to their high melting point. Generally rods or disks are made in transparent ceramic forms.

TECHNICAL DESCRIPTION

The present invention relates to a process for the preparation of bulk or thin film single-crystals of cubic sesquioxides (space group No. 206, Ia-3) of scandium, yttrium or rare earth metals doped with lanthanide ions having a valency of +III by a high-temperature flux growth technique and to the various applications of the single-crystals obtained according to this process, in particular in the optical field.

DEVELOPMENT STAGE

Developed process allows to obtain centimetric crystal with good optical quality. Crystals from millimeter to centimeter sizes :
    
Centimetric crystal of                          Crystal of Gd2O3:Yb3+ with 
       Lu2O3:Yb                                              various sizes

Ease of doping:

On the left: crystal of Y2O3:Er3+.
On the right : crystal  of Y2O3:Eu3+  under UV excitation

BENEFITS

Crystal growth is made at moderate temperature (between 1000°C and 1250°C) allowing the use of well-known material for insulators and crucible. The process allows to grow this kind of material at half their melting point with the ease of doping with any luminescent rare earth (+III)-ions. As grown crystal a perfectly clear without any oxygen vacancies et do not need post growth annealing.

INDUSTRIAL APPLICATIONS

These crystals could be used for usual optical application such as laser materials.
 

For further information, please contact us (Ref 03144-01)

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