Technologies du CNRS

Trouvez les meilleures technologies du CNRS pour mener à bien votre projet d’innovation.

Les brevets les plus récents

Vous êtes un chercheur ?

Nous pouvons vous accompagner sur toute votre
démarche de transfert de technologies.

Voir tous nos services

Vous êtes un industriel ?

Grâce à notre expérience, nos réseaux et notre connaissance de l’écosystème de l’innovation nous vous accompagnons tout au long de votre projet.

Nous contacter

Découvrez les technologies du CNRS

Voir nos actualités et rendez-vous

Rencontrez l’équipe

Fermer

Antenna (transmitter/receiver) Terahertz

Référence

00973-01

Statut des brevets

French patent application FR0610164 filed on November 21st, 2006
JP2010-510703

Inventeurs

Jean-François LAMPIN
Emilien PEYTAVIT

Statut commercial

Exclusive or non-exclusive licence Collaborative research.

Laboratoire

IEMN, CNRS, www.iemn.univ-lille1.fr

Description

TECHNICAL DESCRIPTION

The EPIPHY group, within the IEMN laboratory, is specialized in the technology of terahertz devices.

The scientists have invented and developed an integrated and monolithic antenna for transmission and or reception of EM fields in the TeraHertz range (100 GHz to 3 THz). It is also possible to extend this range into the millimetric (50 – 100 GHz).

A patent application has been filed and covers the device including the antenna and the manufacturing process as well.

As claimed the antenna comprises:

– a conductive ground plane (PM) arranged on the superior surface (S) of a dielectric or semi-conductor substrate (SB)

– a conductive tape (RC) extending above of the said ground plane and forming an angle with this last one so as to form a type Horn antenna radiant structure

– a planar waveguide comprising at least a first (BC1) and a second (BC2) conductive tape arranged on the dielectric or semi-conductor substrate, respectively connected to the said conductive tape (RC) and to the said ground plane (PM).

BENEFITS

  • – Monolithic integration with active circuits,
    – Very high efficiency,
    – Wide band (100 GHz ->  3 THz),
    – Low dispersion,
    – Easy to manufacture and low cost process (microelectronic process compatible with mass production, no machining)…,
    – For pulsed (ps or sub-ps) or continuous wave operating mode,
    – No radiation into the substrate (no Silicon lens required).

INDUSTRIAL APPLICATIONS

For application in the terahertz domain as:
  • – Spectrometry (Gas and solid analysis…),
    – Mm or THz imaging (medical, industrial…),
    – Tomography,
    – NDT (non-destructive testing),
    – Telecommunications.


Besoin de plus d'informations ?

Nous contacter
Fermer

Contactez-nous

  • Ce champ n’est utilisé qu’à des fins de validation et devrait rester inchangé.
Fermer

Les brevets les plus récents