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Planar oxidation method for producing a localised buried

Référence

86668-01

Statut des brevets

French priority Patent applicationn°0501201 filed on Feburary 7th,2005 and entitled “Procédé d’oxydation planaire pour réaliser un isolant”

Inventeurs

Guilhem ALMUNEAU
Thierry CAMPS
Chantal FONTAINE

Statut commercial

Exclusive or non-exclusive licenses

Description

TECHNICAL DESCRIPTION

With the aim to improve the state-of-the-art performances of vertical-cavity based devices, in order to enlarge their functionalities, and to further extend the capabilities in the AlGaAs material system, the remaining technological limitations for this kind of devices have to be overcome.

In this way, the non-uniformity of the carrier injection and the difficulty in precisely controlling the shape and the size of the active region from AlOx apertures (formed by lateral selective oxidation of an AlAs buried layer) is addressed.

In this aim, the inventor has developed a novel technological process of planar oxidation (PAlOx) which enables a very flexible way to structure transversally the refractive indices in the area surrounding the active region.

The innovating technique allows addressing separately the electrical and optical operating aspects of these optoelectronic devices, thus leading to the growth for novel structures with controlled transverse optical behaviour and spatially mastered electrical injection.

The main breakthrough of the invention is to maintain a planar technology through the fabrication of oxide-confined devices, with increased possibilities of the variety of oxide aperture shapes and improved accuracy of the dimensions in a reduced process time.

INDUSTRIAL APPLICATIONS

This innovation is dedicated to VCSELs market but also waveguide, AsGa devices and LEDs.

For further information, please contact us (Ref 86668-01)

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