CONTEXT

Molecular materials having a spin transition have been studied since the `30s. Since then, more than 300 materials have been synthesised by several physicochemic techniques.

For using the physical properties of inorganic and metalorganic materials, it is possible to create a thin film on a substrate and micro-structuring a component. However, such technique is very difficult often failed. This is due to the incompatibility between deposition techniques and the spin transition (which is very sensitive to crystal network).

Thus, no available solutions are satisfying for structuring and keeping safe as well the spin transition property of a molecular material.

TECHNICAL DESCRIPTION

M. Bousseksou’s invention relates to a new method of applying thin films of substantially pure molecular materials having a spin transition, with retention of the hysteresis properties of the material. This method is used to obtain a dense homogeneous surface of very low roughness.

The thin film realized by M. Bousseksou method, is made only by the spin transition material. Therefore, it is not needed to make a melt as common spin coating techniques (which imply a melt of adhesive polymer/material).

This technique allows a very good control of thin film thickness in a large range: from nm to um. Thus, it is now possible to realize submicron spin transition dots.

For the first time the inventors have realized a bistable thin film made by a pure spin transition material.

BENEFITS

In spite of the thin film structuring, physical and electrical properties are kept up. There is no intrinsic limit for the miniaturization of the component, the ultimate limit being the size of the molecules used.

DEVELOPMENT STAGE

Prototypes are available

INDUSTRIAL APPLICATIONS

The method can be useful for all application needing spin transition materials: electronics, optics, photography…

– The patent application protects also a memory cell.
– Other applications are: thermochrom, photochrom, electrochrome or piezochrome components on a glass.

For further information, please contact us (Ref 86414-02)