CNRS Technologies

Find the best CNRS technologies to boost your innovative project.

Newest patents

You are a research scientist?

We can guide you through the whole technology transfer process.

See all our services

You are a corporate player?

Thanks to our expertise, our network and our know-how of the innovation ecosystem, we support you throughout your project.

Contact us

Follow our news and upcoming events

Discover CNRS technologies

Meet our team

Close

Large size and high quality graphene on silicium

Reference

04490-01

Patents status

Priority patent application FR11 58818 filed on septembre 30, 2011 and entitled “Procédé de formation d’une couche de graphène à la surface d’un substrat comprenant une couche de silicium”

 PCT EP2012069232 filed on September 28th, 2012

Inventors

A.Ouerghi

commercial status

Exclusive or not exclusive, Research collaboration

Laboratory

Laboratoire de Photonique et de Nanostructures -LPN, UPR 20, Marcoussis, France.
http://www.lpn.cnrs.fr/fr/Commun/presentation.php

Description

CONTEXT

Due to its electronical properties graphene is largely studied. The dificulty remains however to produce a controled graphene layer. Different ways have been proposed up to now and two production routes are considered at the present time. The first one consists in exfoliation of graphite with an adhesive tape as far as the material is multilayered but this method can not be exploited on an industrial scale. The second process consists in warming up a SiC substrate so that the silicum evaporate and the graphene is formed. The problem encountered with said process is the non uniformity of the graphene thickness as the carbone layer may be formed of graphene in some areas but of multilayers of graphite in other areas without possibility to control the arrangement of such areas on the subtrate. Large areas of real graphene are impossible to produce.

TECHNICAL DESCRIPTION

This invention solves the problems described above by a simple process. This process consits in growing a SiC layer on a silicium substrate and then warm the substrate to evaporate the silicium. Graphene layer grows then on said substrate and  expand laterlally giving an homogeneous and large surface of graphene.

BENEFITS

Control of the thickness of graphene formed
Large areas of graphene

INDUSTRIAL APPLICATIONS

NEMS, MEMS, sensors

For further information, please contact us (Ref 04490-01)

Need further information ?

Contact us
Close

Contact us

  • This field is for validation purposes and should be left unchanged.
Close

Newest patents